On the approximation of convex functions by Bernstein-type operators

As a consequence of Jensen's inequality, centered operators of probabilistic type (also called Bernstein-type operators) approximate convex functions from above. Starting from this fact, we consider several pairs of classical operators and determine, in each case, which one is better to approximate convex functions. In almost all the discussed examples, the conclusion follows from a simple argument concerning composition of operators. However, when comparing Szász-Mirakyan operators with Bernstein operators over the positive semi-axis, the result is derived from the convex ordering of the involved probability distributions. Analogous results for non-centered operators are also considered.     

Completely Simple Semigroups,Lie Algebras,and the Road Coloring Problem

Consider a semigroup generated by matrices associated with an edge-coloring of a strongly connected, aperiodic digraph. We call the semigroup Lie-solvable if the Lie algebra generated by its elements is solvable. We show that if the semigroup is Lie-solvable then its kernel is a right group. Next, we study the Lie algebra generated by the kernel. Lie algebras generated by two idempotents are analyzed in detail. We find that these have homomorphic images that are generalized quaternion algebras. We show that if the kernel is not a direct product, then the Lie algebra generated by the kernel is not solvable by describing the structure of these algebras. Finally, we discuss an infinite class of examples that are shown to always produce strongly connected aperiodic digraphs having kernels that are not right groups.     

Generators of some Ramanujan formulas

In this paper we prove some Ramanujan type formulas for 1/π but without using the theory of modular forms. Instead we use the WZ—method created by H. Wilf and D. Zeilberger and find some hypergeometric functions in two variables which are second components of WZ—pairs than can be certified using Zeilberger's EKHAD package. These certificates have an additional property which allows us to get generalized Ramanujan's type series which are routinely proven by computer. We call these second hypergeometric components of the WZ—pairs generators. Finding generators seems a hard task but using a kind of experimental research (explained below), we have succeeded in finding some of them. Unfortunately we have not found yet generators for the most impressive Ramanujan's formulas. We also prove some interesting binomial sums for the constant 1/π². Finally we rewrite many of the obtained series using pochhammer symbols and study the rate of convergence. 2000 Mathematics Subject Classification Primary—33C20     

Theoretical study on the structures and electronic spectra of TCNE2-.

Investigations into the charge-separated states and electron-transfer transitions in tetracyanoethylene (TCNE) complexes have recently generated much interest. In this work we present theoretical calculations showing that the most stable structure of the dianion TCNE2- has D2d symmetry in vacuum as well as in the solvents dichloromethane and acetonitrile. By means of the coupled cluster linear response, we compute the vertical electronic spectrum in both the gas phase and solution. The theoretical results are compared to the experimental data and good agreement is achieved.     

Lower bounds for transition probabilities on graphs

The paper presents two results. The first one provides separate conditions for the upper and lower estimates of the distribution of the time of exit from balls of a random walk on a weighted graph. The main result of the paper is that the lower estimate follows from the elliptic Harnack inequality. The second result is an off-diagonal lower bound for the transition probability of the random walk.     

Epimerization, diastereoselectivity and hemilability in dicationic chiral ruthenium complexes with bidentate (PS) bisphosphine monosulfide ligands

The binding of heterobidentate P^∧S ligands introduces metal-centered chirality to the planar chiral parent complex Ru(η⁶:η¹-NMe₂C₆H₄C₆H₄PCy₂)Cl₂. Observed diastereomeric ratios for the kinetic product vary dramatically depending upon ring size of the chelate formed with the P^∧S ligand. The complexes epimerize very slowly to thermodynamic product ratios that are substantially different from the kinetic product ratios.     

Relation de Rankine Hugoniot faible pour les lois de conservation avec contraintes primitives convexes

We describe a Weak Rankine Hugoniot relation for constrained discontinuous solutions of conservation laws. The constraint is convex in the primitive variable. Various examples show the potential interest of this approach. To cite this article: B. Després, C. R. Acad. Sci. Paris, Ser. I 342 (2006).     

On the Weak Invariance Principle for Stationary Sequences under Projective Criteria

In this paper, we study the central limit theorem and its weak invariance principle for sums of a stationary sequence of random variables, via a martingale decomposition. Our conditions involve the conditional expectation of sums of random variables with respect to the distant past. The results contribute to the clarification of the central limit question for stationary sequences. Magda Peligrad is supported in part by a Charles Phelps Taft research support grant at the Univeristy of Cincinnati and the NSA grant H98230-05-1-0066.     

AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy

We report the realization of an AlGaN/GaN HEMT on silicon (001) substrate with noticeably better transport and electrical characteristics than previously reported. The heterostructure has been grown by molecular beam epitaxy. The 2D electron gas formed at the AlGaN/GaN interface exhibits a sheet carrier density of 8×10¹² cm⁻² and a Hall mobility of 1800 cm²/V s at room temperature. High electron mobility transistors with a gate length of 4 μm have been processed and DC characteristics have been achieved. A maximum drain current of more than 500 mA/mm and a transconductance g_m of 120 mS/mm have been obtained. These results are promising and open the way for making efficient AlGaN/GaN HEMT devices on Si(001).